MJB42CT4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJB42CT4G
Código: J42CG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de transistor bipolar MJB42CT4G
MJB42CT4G Datasheet (PDF)
mjb42ct4g.pdf
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MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for
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MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for
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MJB41C (NPN),MJB42C (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsD2PAK for Surface Mounthttp://onsemi.comFeaturesCOMPLEMENTARY SILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS(No Suffix)6 AMPERES, Electrically the Same as TIP41 and T1P42 Series100 VOLTS, 65 WATTS Pb-Free Packages are AvailableM
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