MJD253-1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD253-1G
Código: J253G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de transistor bipolar MJD253-1G
MJD253-1G Datasheet (PDF)
mjd253-1g.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd253t4g.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd243 mjd253.pdf
MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL
njvmjd243 njvmjd253.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd253.pdf
isc Silicon PNP Power Transistor MJD253DESCRIPTIONHigh DC Current Gain-: h = 40(Min) @ I = -0.2 AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJD243Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low voltage, low -power ,high-gain audioamplifier appli
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJD148 | BSW24 | NA21YJ
History: MJD148 | BSW24 | NA21YJ
Liste
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