MJD2955T4G Datasheet. Equivalente

 ..1. Size:174K  onsemi
 mjd2955t4g.pdf

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea

 7.1. Size:202K  motorola
 mjd2955r mjd3055.pdf

Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S

 7.2. Size:188K  st
 mjd2955 mjd3055.pdf

MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a

 7.3. Size:43K  fairchild semi
 mjd2955.pdf

MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE2955T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2

 7.4. Size:334K  mcc
 mmjd2955.pdf

MCC Micro Commercial Components TM MMJD2955 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates PNP epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation. Transistors Collector-cu

 7.5. Size:132K  onsemi
 mjd2955 mjd3055.pdf

 7.6. Size:174K  onsemi
 mjd2955-1g.pdf

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea

 7.7. Size:128K  onsemi
 njvmjd2955 njvmjd3055.pdf

 7.8. Size:174K  onsemi
 mjd2955g.pdf

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea

 7.9. Size:162K  onsemi
 mjd2955.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.10. Size:1647K  jiangsu
 mjd2955.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE Electrically Simiar to MJD3055 2 2.COLLECTOR DC Current Gain Specified to10 Amperes 1 3 3.EMITTER Equivalent Circuit MJD2955=Device code

 7.11. Size:173K  lge
 mjd2955.pdf

MJD2955(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed Switching applications . Electrically simiar to MJD3055. DC current gain specified to10 Amperes TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -70 V V

 7.12. Size:182K  wietron
 mjd2955.pdf

MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features 1.BASE 1.BASE 3 3 * Designed for General Purpose Amplifier and Low Speed 2.COLLECTOR 2.COLLECTOR 2 2 3.EMITTER 1 3.EMITTER 1 Switching Applications * DC Current Gain Specified to 10 Amperes D-PAK(TO-252) D-PAK(TO-252) MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Value Parameter Unit Co