MJD31C1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

MJD31CLow voltage NPN power transistorDatasheet - production dataFeatures Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C3Application1 General purpose linear and switching equipmentDPAKTO-252DescriptionThe device is manufactured in planar technologywith base island layout. The resulting transistor Fig

MJD31CT4-ALow voltage NPN power transistorDatasheet - production dataFeatures This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel3 Complementary to the PNP type MJD32C1ApplicationDPAK General purpose linear and switching TO-252equipmentDescriptionFigure 1. Internal schematic diagramThe dev

MJD31/31CGeneral Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31CD-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Uni

MJD31C100 V, 3 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD32C2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric

MJD31CA100 V, 3 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD32CA2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electr

MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 100V Case: TO252 (DPAK) IC = 3A high Continuous Collector Current Case Material: Molded Plastic, "Green" Molding Compound ICM = 5A Peak Pulse Current UL Flammability Classification Rating 94V-0 Ideal for Power Switching or Amplification Applications Moisture Sensitivity: Lev

MJD31CQ100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case: TO252 (DPAK) This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material: Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Ter

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Designed for general Excellent DC Current Gain Characteristics APACKAGE INFORMATION CBDPackage MPQ Leader Size TO-252 2.5K 13 inch G EK H FN OPM JCollector 2 Millimete

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD31C TRANSISTOR (NPN) FEA TURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves (1 Suffix)

MJD31C(NPN)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) Lead Formed Version in 16 mm Tape and Reel (T4 Suffix) TO-25

SEMICONDUCTORMJD31CTECHNICAL DATA MJD31C TRANSISTOR (NPN) AICJ FEA TURES Designed for General Purpose Amplifier and DIM MILLIMETERSA 6 50 0 2Low Speed Switching Applications.B 5 60 0 2C 5 20 0 2 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) D 1 50 0 2 Straight Lead Version in Plastic Sleeves (1 Suffix) E 2 70

isc Silicon NPN Power Transistors MJD31CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOComplement to Type MJD32CDPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and low spee