MJD31CQ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case TO252 (DPAK) This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Ter

MJD31C Low voltage NPN power transistor Datasheet - production data Features Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor Fig

MJD31CT4-A Low voltage NPN power transistor Datasheet - production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The dev

MJD31/31C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Uni

MJD31C 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric

MJD31CA 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electr

MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 100V Case TO252 (DPAK) IC = 3A high Continuous Collector Current Case Material Molded Plastic, "Green" Molding Compound ICM = 5A Peak Pulse Current UL Flammability Classification Rating 94V-0 Ideal for Power Switching or Amplification Applications Moisture Sensitivity Lev

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Designed for general Excellent DC Current Gain Characteristics A PACKAGE INFORMATION C B D Package MPQ Leader Size TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimete

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD31C TRANSISTOR (NPN) FEA TURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves ( 1 Suffix)

MJD31C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix) TO-25

isc Silicon NPN Power Transistors MJD31C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Complement to Type MJD32C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and low spee