MJD32CRLG Datasheet. Equivalente

 ..1. Size:176K  onsemi
 mjd32crlg.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

 8.1. Size:391K  st
 mjd32c.pdf

MJD32C Low voltage PNP power transistor Datasheet - production data Features Surface-mounting TO-252 power package in TAB tape and reel Complementary to the NPN type MJD31C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor

 8.2. Size:360K  st
 mjd32ct4-a.pdf

MJD32CT4-A Automotive-grade low voltage PNP power transistor Datasheet - production data Features AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31CT4-A 3 Applications 1 General purpose linear and switching DPAK equipment Description The device is manufactured in planar technology Figure 1. Inte

 8.3. Size:49K  fairchild semi
 mjd32c.pdf

MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK Straight Lead (I-PAK, - I Suffix) 11 Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherw

 8.4. Size:225K  nxp
 mjd32c.pdf

MJD32C 100 V, 3 A PNP high power bipolar transistor 30 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement MJD31C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric

 8.5. Size:367K  diodes
 mjd32c.pdf

MJD32C 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > -100V Case TO252 (DPAK) IC = -3A high Continuous Collector Current Case Material Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 ICM = -5A Peak Pulse Current Moisture Sensitivity Level 1 per J-STD-020 Ideal for Power Switching or A

 8.6. Size:417K  diodes
 mjd32cq.pdf

NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case TO252 (DPAK) This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture

 8.7. Size:176K  onsemi
 mjd32ct4g.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

 8.8. Size:135K  onsemi
 mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

 8.9. Size:176K  onsemi
 mjd32cg.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl

 8.10. Size:132K  onsemi
 njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm

 8.11. Size:2198K  jiangsu
 mjd32c.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD32C TRANSISTOR (PNP) FEATURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves ( 1 Suffix)

 8.12. Size:233K  lge
 mjd32c.pdf

MJD32C(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) TO-252-2L Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix)

 8.13. Size:1175K  first silicon
 mjd32c.pdf

SEMICONDUCTOR MJD32C TECHNICAL DATA MJD32C TRANSISTOR (PNP) A I C J FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications DIM MILLIMETERS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) A 6 50 0 2 B 5 60 0 2 Straight Lead Version in Plastic Sleeves ( 1 Suffix) C 5 20 0 2 D 1 50 0 2 Lead Formed