MJD32CT4G Todos los transistores

 

MJD32CT4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD32CT4G
   Código: J32CG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de transistor bipolar MJD32CT4G

 

MJD32CT4G Datasheet (PDF)

 ..1. Size:176K  onsemi
mjd32ct4g.pdf

MJD32CT4G MJD32CT4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

 0.1. Size:135K  onsemi
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

MJD32CT4G MJD32CT4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 0.2. Size:132K  onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

MJD32CT4G MJD32CT4G

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

 6.1. Size:360K  st
mjd32ct4-a.pdf

MJD32CT4G MJD32CT4G

MJD32CT4-AAutomotive-grade low voltage PNP power transistorDatasheet - production dataFeatures AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reelTAB Complementary to the NPN type MJD31CT4-A3Applications1 General purpose linear and switching DPAKequipmentDescriptionThe device is manufactured in planar technology Figure 1. Inte

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History: 2N6590 | 2N5338LCC4 | MD2905

 

 
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