MJD42CT4G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD42CT4G 📄📄
Código: J42CG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO-252
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MJD42CT4G datasheet
mjd42ct4g.pdf
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Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straigh
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MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S
mjd42crlg.pdf
MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S
Otros transistores... MJD350T4G, MJD360T4-A, MJD361T4-A, MJD41CRLG, MJD41CT4G, MJD42C1G, MJD42CG, MJD42CRLG, 2SC2383, MJD44E3T4G, MJD44H11-1G, MJD44H11G, MJD44H11RLG, MJD44H11T4-A, MJD44H11T4G, MJD44H11T5G, MJD45H11-1G
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