MMBR920L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBR920L 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.035 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4500 MHz
Capacitancia de salida (Cc): 1 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: SOT-23
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MMBR920L datasheet
mmbr920l.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB
mmbr920 .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1 High-Frequency Transistor Designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC
Otros transistores... MJD50T4G, MJD5731T4G, MJD6039T4G, MM420, MM421, MMBR571L, MMBR901L, MMBR911L, 2N2222, MMBR931L, MMBR941L, MMBR951L, MMBT1015-H, MMBT1015-L, MMBT1116, MMBT1116A, MMBT1616
History: RT1P136M | MMBR941L | BC847T
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