MMBT1015-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT1015-H
Código: BA
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT1015-H
MMBT1015-H Datasheet (PDF)
mmbt1015-h.pdf
MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current
mmbt1015-l.pdf
MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current
mmbt1015.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1015G-x-AC3-R SOT-113 E B C Tape ReelMMBT1015G-x-AE3-R
mmbt1010 msd1010t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2750 | 2N2856-2
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050