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MMBT2222A-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT2222A-G
   Código: 1P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar MMBT2222A-G

 

MMBT2222A-G Datasheet (PDF)

 ..1. Size:141K  comchip
mmbt2222a-g.pdf

MMBT2222A-G
MMBT2222A-G

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

 4.1. Size:141K  comchip
mmbt2222a-hf.pdf

MMBT2222A-G
MMBT2222A-G

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

 4.2. Size:4241K  msksemi
mmbt2222a-ms.pdf

MMBT2222A-G
MMBT2222A-G

www.msksemi.comMMBT2222A-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A-MS)1. BASEMARKING:1P2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Em

 4.3. Size:930K  cn salltech
mmbt2222a-l mmbt2222a-h.pdf

MMBT2222A-G
MMBT2222A-G

 4.4. Size:795K  cn shandong jingdao microelectronics
mmbt2222a-l mmbt2222a-h.pdf

MMBT2222A-G
MMBT2222A-G

Jingdao Microelectronics co.LTD MMBT2222AMMBT2222ASOT-23NPN TRANSISTOR3FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 75 V2.EMITTERCollectorEmitte

 4.5. Size:1943K  wpmtek
mmbt2222a-l mmbt2222a-h.pdf

MMBT2222A-G
MMBT2222A-G

MMBT2222A TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT2907 ; Complementary to MMBT2907 250mW; Power Dissipation of 250mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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