MMBT2222ALTG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT2222ALTG  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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MMBT2222ALTG datasheet

 ..1. Size:146K  first silicon
 mmbt2222altg.pdf pdf_icon

MMBT2222ALTG

MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo

 3.1. Size:134K  onsemi
 mmbt2222alt1g.pdf pdf_icon

MMBT2222ALTG

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 3.2. Size:134K  onsemi
 mmbt2222alt3g.pdf pdf_icon

MMBT2222ALTG

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 3.3. Size:1684K  lge
 mmbt2222alt1.pdf pdf_icon

MMBT2222ALTG

MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO

MOSTRAR MÁS

Otros transistores... MMBT1815-L, MMBT2131T1G, MMBT2222A-G, MMBT2222AGH, MMBT2222A-HF, MMBT2222ALP4, MMBT2222ALT1G, MMBT2222ALT3G, TIP42C, MMBT2222AM3T5G, MMBT2222ATT1G, MMBT2222AWT1G, MMBT2222LT1, MMBT2222LT1G, MMBT2222W, MMBT2369ALT1G, MMBT2369LT1G