MMBT2369LT1G Datasheet. Equivalente

 ..1. Size:132K  onsemi
 mmbt2369lt1g.pdf

MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M

 3.1. Size:190K  onsemi
 mmbt2369lt1.pdf

MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc 2 EMITTER Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 4.5 Vd

 5.1. Size:127K  onsemi
 mmbt2369l mmbt2369al.pdf

MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and MARKING PPAP Capable DIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 xxx MG CASE 318 G STYLE 6 MAXIMUM RATINGS 1 Rating Symbo

 6.1. Size:304K  motorola
 mmbt2369.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2369LT1/D MMBT2369LT1 Switching Transistors COLLECTOR * MMBT2369ALT1 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage VCEO 15 Vdc 2 Collector Emitter Voltage VCES 40 Vdc Collector Base Voltage VCBO 40 Vdc CASE 318 08, STYL

 6.2. Size:49K  fairchild semi
 mmbt2369.pdf

MMBT2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. C E SOT-23 B Mark 1J Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V

 6.3. Size:121K  fairchild semi
 mmbt2369 pn2369.pdf

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit

 6.4. Size:749K  fairchild semi
 pn2369a mmbt2369a.pdf

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo

 6.5. Size:132K  onsemi
 mmbt2369alt1g.pdf

MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M

 6.6. Size:380K  willas
 mmbt2369-a-lt1.pdf

FM120-M WILLAS THRU MMBT2369(A)LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Switching Transistors SOD-123 PACKAGE Pb Free Product Package outline Features We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD