MMBT2369LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M

MMBT2369LT1G,MMBT2369ALT1GSwitching TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 15 Vdc2EMITTERCollector-Emitter Voltage VCES 40 VdcCollector-Base Voltage VCBO 40 VdcEmitter-Base Voltage VEBO 4.5 Vd

MMBT2369L, MMBT2369ALSwitching TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andMARKINGPPAP CapableDIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23xxx MGCASE 318GSTYLE 6MAXIMUM RATINGS1Rating Symbo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2369LT1/DMMBT2369LT1Switching Transistors COLLECTOR*MMBT2369ALT13NPN Silicon*Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value Unit1CollectorEmitter Voltage VCEO 15 Vdc2CollectorEmitter Voltage VCES 40 VdcCollectorBase Voltage VCBO 40 Vdc CASE 31808, STYL

MMBT2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.CESOT-23BMark: 1JAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.5 V

February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit

PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo

MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M

FM120-M WILLASTHRUMMBT2369(A)LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSwitching TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD