MMBT3904FA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT3904FA  📄📄 

Código: 1N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.435 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: X2-DFN0806-3

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MMBT3904FA datasheet

 ..1. Size:135K  diodes
 mmbt3904fa.pdf pdf_icon

MMBT3904FA

MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case X2-DFN0806-3 IC = 200mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Le

 5.1. Size:572K  diodes
 mmbt3904fz.pdf pdf_icon

MMBT3904FA

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case X2-DFN0606-3 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level

 5.2. Size:179K  secos
 mmbt3904fw.pdf pdf_icon

MMBT3904FA

MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.0

 5.3. Size:555K  panjit
 mmbt3904fn3.pdf pdf_icon

MMBT3904FA

MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) M

MOSTRAR MÁS

Otros transistores... MMBT2907AGH, MMBT2907ALT1G, MMBT2907ALT3G, MMBT2907ALTG, MMBT2907AM3, MMBT2907AWT1G, MMBT2907-G, MMBT3416LT3G, 2SA1837, MMBT3904FZ, MMBT3904-G, MMBT3904GH, MMBT3904-HF, MMBT3904LT1G, MMBT3904LT3G, MMBT3904LTG, MMBT3904M