MMBT3906TT1G Todos los transistores

 

MMBT3906TT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT3906TT1G
   Código: 2A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-416 SOT-490

 Búsqueda de reemplazo de transistor bipolar MMBT3906TT1G

 

MMBT3906TT1G Datasheet (PDF)

 ..1. Size:87K  onsemi
mmbt3906tt1g.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906TT1General PurposeTransistorsPNP SiliconThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Pb-Free Package is AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Ra

 3.1. Size:166K  onsemi
mmbt3906tt1.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906TT1General PurposeTransistorsPNP SiliconThis transistor is designed for general purpose amplifierwww.onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEAMPLIFIER TRANSISTORSFeatures NSVM Prefix for Automotive and Other Applications RequiringSURFACE MOUNTUnique Site and Co

 3.2. Size:423K  willas
mmbt3906tt1.pdf

MMBT3906TT1G MMBT3906TT1G

FM120-M WILLASTHRUMMBT3906TT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

 5.1. Size:131K  fairchild semi
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

February 2008MMBT3906TPNP Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B Suitable for general switching & amplificationMarking : A06 Well suited for portable application SOT-523F As complementary type, NPN MMBT3904T is recommended Absolute Maximum Ratings Ta = 25C unless o

 5.2. Size:422K  diodes
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T 40V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Termin

 5.3. Size:172K  diodes
mmbt3906t 2.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT3904T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22B CTOP VIEWB 0.75 0.85 0.80Mechanical Data B EC 1.45 1.75 1.60G Case: SOT-523 D 0.50

 5.4. Size:267K  mcc
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMBT3906TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Surface Mount SOT-523 Package Epitaxial Planar Die ConstructionPurpose Transistor Epoxy

 5.5. Size:238K  mcc
mmbt3906t sot-523.pdf

MMBT3906TT1G MMBT3906TT1G

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMBT3906TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Surface Mount SOT-523 Package Epitaxial Planar Die ConstructionPurpose Transistor Epoxy

 5.6. Size:209K  onsemi
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.7. Size:773K  secos
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking ShippingMMBT3906T 2A 3000/Tape&ReelMillimeter Millimete

 5.8. Size:5269K  jiangsu
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO

 5.9. Size:197K  lge
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T SOT-523 Transistor (PNP) 1. BASE SOT-5232. EMITTER 3. COLLECTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:3N Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCo

 5.10. Size:381K  wietron
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906TCOLLECTOR3General Purpose Transistor3PNP Silicon1 12BASEP b Lead(Pb)-Free2SC-89EMITTER(SOT-523F)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5.0 VCollector Current-Continuous ICmA-200Thermal CharacteristicsCharacteristics Symbol Max Unit(1)Total

 5.11. Size:925K  kexin
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

SMD Type TransistorsPNP TransistorsMMBT3906T (KMBT3906T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Epitaxial Planar Die Construction2 1 Also Available in Lead Free Version Complementary to MMBT3904T30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter S

 5.12. Size:709K  slkor
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T Plastic-Encapsulate TransistorsTRANSISTOR (PNP)SOT-523 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Voltage VEB

 5.13. Size:3383K  msksemi
mmbt3906t-ms.pdf

MMBT3906TT1G MMBT3906TT1G

www.msksemi.comMMBT3906T-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)3MMBT3906T-MSFEATURES 1. BASE Epitaxial Planar Die Construction2. EMITTER Complementary NPN Type Available3. COLLECTOR1 Also Available in Lead Free Version2MARKING:3N SOT-523 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VC

 5.14. Size:949K  cn shikues
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906Tsulate Transistors PNP Plastic-EncapFEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:2ASOT-523 1. BASE 2. EMITTER 3. COLLECTOR=25 unless otherwise noted) MAXIMUM RATINGS (T aSymbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Voltage V

 5.15. Size:5755K  cn twgmc
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906TMMBT3906TMMBT3906TMMBT3906TTRANSISTOR(PNP)MMBT39 0 6TSOT523FEATURES Epitaxial Planar Die Construction 1. BASE Complementary NPN Type Available 2. EMITTER Also Available in Lead Free Version 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Volta

 5.16. Size:313K  cn yangzhou yangjie elec
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

RoHS COMPLIANT MMBT3906T PNP General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage: SOT-523 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 3N Maximum R

 5.17. Size:361K  cn doeshare
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

MMBT3906T MMBT3906T SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

 5.18. Size:920K  cn cbi
mmbt3906t.pdf

MMBT3906TT1G MMBT3906TT1G

SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector

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