MMBT3906WG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconCOLLECTOR33BASE11MMBT3906WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max. UnitoT

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3906WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

MMBT3906WPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESA suffix of "-C" specifies halogen & lead-freeSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min Max Complementary NPN Type Available(MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification andB 1.150 1.350ASwitchingL C 0.800 1.000"Lead free is availab

MMBT3906WCOLLECTOR3General Purpose Transistor3PNP Silicon1BASE122EMITTERSOT-323(SC-70)M aximum R atingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-200Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipati

SMD Type TransistorsPNP TransistorsMMBT3906W Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-40V Complementary to MMBT3904W1 Base2 Emitter3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Col

MMBT3906WMMBT3906WMMBT3906WMMBT3906WMMBT39 0 6W TRANSISTOR(PNP)for switching and amplifier applications SOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Po

MMBT3906W MMBT3906W SOT-323 Silicon General Purpose Transistor (PNP) General description SOT-323 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter Symbol Value Unit Collector Base

MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 3NOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O