MMBT4126LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &