MMBT5401GH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. MMBT5401GH 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CBO 160 Vdc Emitter Base Voltage V EBO 5.0

MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability MIL-STD-202, Method 208 PB Free Products Are Available 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 150 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 160 Vdc SOT 23 (TO 236AB) Emitter Base Volt

2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V I

MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Bas

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Type - MMBT5551 Case Material Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation

MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTO

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT5401M3 High Voltage Transistor PNP Silicon The MMBT5401M3 device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount package. www.onsemi.com This device is ideal for low-power surface mount applications where board space is at a premium. Features SOT-723 NSV Prefix for Au

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant* COLLECTOR MAXIMUM RAT

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant COLLECTOR MAXIMUM RATI

MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc S

UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Base C Collector MARKING www.unisonic.com.t

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING K4M 1

MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symb

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -

www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc -

MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http //www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc)

FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in order to o

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.6 A Collector-base voltage V(BR)CBO -160 V Operating and storage junction temperature range Unit mm

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T) High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage -V 160 V CBO Collector Emitter Voltage -V 150 V CEO Emitt

MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 1

SMD Type Transistors SMD Type PNP Transistors MMBT5401 (KMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter volta

MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon FEATURES Lead free in compliance with EU RoHS 2.0 0.120(3.04) Green molding compound as per IEC 61249 standard 0.110(2.80) MECHANICAL DATA 0.056(1.40) 0.047(1.20) Case SOT-23 plastic case. Terminals Solderable per MIL-STD-750,Method 2026 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) Standard packaging 8mm ta

General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) 1 2 Diagram 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.0

GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage -150V amplifier and switch. Collector-Base Voltage -160V Collector Current-Continuous -500mA Lead(Pb)-Free Packages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information

MMBT5401 FEATURES FEATURES FEATURES FEATURES PNP High Voltage Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO Collector-Base Voltage V -160 Vdc CBO Emitter-Base Voltage V -6.0 Vdc EBO Collector Current Continuous Ic -500 mAdc THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS

R UMW UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo

MMBT5401 Features SOT-23 (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector oC, Absolute Maximum Ratings (T =25 unless otherwise A noted) Parameter Symbol Value Unit -V 160 V Collector Base Voltage CBO Collector Emitter Voltage -V 150 V CEO -V 6V Emitter Base Voltage EBO Collector Current -I 600 mA C P 350 mW Pow

MMBT5401 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING 2L 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching MARKING 2L 3 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collect

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15

MMBT5401 HD-ST0.42 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking 2L Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C

MMBT5401 PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -160 V CBO V

MMBT5401 TRANSISTOR(PNP) FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow

www.msksemi.com MMBT5401-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emit

MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA C Power Dissipation P

Jingdao Microelectronics co.LTD MMBT5401 MMBT5401 SOT-23 PNP TRANSISTOR 3 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -160 V 2.EMITTER 3.COLLECTOR Collec

MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMB

Integrated in OVP&OCP products provider MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT5401 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High Voltage Transistors Pb-Free Packages are Available Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector P

MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo

MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

MMBT3904 MMBT5401 AO3400 SI2305 MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1 BASE 2 EMITTER MARKING 2L 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Vo

RoHS RoHS COMPLIANT COMPLIANT MMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-

RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 2L Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC

MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5401 2L . Maximum Ra

SOT-523 Plastic-Encapsulate Transistors TRANSISTOR ( PNP) MMBT5401T SOT 523 FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emi

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5401 FEATURES PNP High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO - Collector-Base Voltage V -160 Vdc CBO - Emitte

MMBT5401 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -150Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V. Collector current IC=-0.6A. ansition frequency fT>100MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

MMBT5401 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb

PNP MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V