MMBT6427LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Un

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6427LT1/D Darlington Transistor MMBT6427LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEBO 12

2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collect

MMBT6427 COLLECTOR 3 Darlington Amplifier Transistors NPN * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead(Pb)-Free EMITTER 2 MAXIMUM RATINGS 3 Rating Symbol V alue Unit Collector Emitter Voltage V CEO 40 Vdc 1 2 Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 12 Vdc SOT-23 Collector Current Continuous I C 5