MMBT6428LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT6428LT1
Código: 1KM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT6428LT1
MMBT6428LT1 Datasheet (PDF)
mmbt6428lt1 mmbt6429lt1.pdf
MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA
mmbt6428lt1.pdf
SEMICONDUCTOR MMBT6428LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 6 V PIN: 1 2 3Collector Current Ic 200 mA STYLE
mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf
MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconwww.onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIMUM
mmbt6428lt1g.pdf
MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA
mmbt6428 mmbt6429.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6428LT1/DAmplifier TransistorsMMBT6428LT1COLLECTORNPN SiliconMMBT6429LT131BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 6428LT1 6429LT1 Unit2CollectorEmitter Voltage VCEO 50 45 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 55 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO
mmbt6428.pdf
MMBT6428NPN General Purpose Amplifier3 This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10.2SOT-231Mark: 1K1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VIC C
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
