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MMBT945-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT945-H

Código: CR

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: SOT-23

Búsqueda de reemplazo de transistor bipolar MMBT945-H

 

MMBT945-H Datasheet (PDF)

0.1. mmbt945-h-l.pdf Size:263K _mcc

MMBT945-H
MMBT945-H

MCCMMBT945-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 MMBT945-HPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.2Watts of Power Dissipation.NPN Silicon Collector-current 0.15A Collector-base Voltage 60VPlastic-Encapsulate Operating and storage junction temperature range: -55OC to +150O

7.1. mmbt945.pdf Size:179K _utc

MMBT945-H
MMBT945-H

UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter Voltage: BVCBO=50V * Collector Current up to 150mA * High hFE Linearity * Complimentary to UTC MMBT733 ORDERING INFORMA

 9.1. mmbt918l.pdf Size:97K _motorola

MMBT945-H
MMBT945-H

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT918LT1/DVHF/UHF TransistorMMBT918LT1NPN SiliconCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol V

9.2. pn918 mmbt918.pdf Size:748K _fairchild_semi

MMBT945-H
MMBT945-H

PN918 MMBT918CEC TO-92BBE SOT-23Mark: 3BNPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 30 V

 9.3. mmbt918lt1-d.pdf Size:113K _onsemi

MMBT945-H
MMBT945-H

MMBT918LT1GVHF/UHF TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 15 VdcCollector-Base Voltage VCBO 30 Vdc2EMITTEREmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTHERMAL CHARA

9.4. mmbt918lt1g.pdf Size:109K _onsemi

MMBT945-H
MMBT945-H

MMBT918LT1GVHF/UHF TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 15 VdcCollector-Base Voltage VCBO 30 Vdc2EMITTEREmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTHERMAL CHARA

 9.5. mmbt9014.pdf Size:125K _utc

MMBT945-H
MMBT945-H

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel MA

9.6. mmbt9012.pdf Size:98K _utc

MMBT945-H
MMBT945-H

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2*High total power dissipation. (625mW) 1*High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3MARKING 12SOT-231: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specifie

9.7. mmbt9013.pdf Size:144K _utc

MMBT945-H
MMBT945-H

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

9.8. mmbt9015.pdf Size:94K _utc

MMBT945-H
MMBT945-H

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9014 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel MARKI

9.9. mmbt9018.pdf Size:106K _utc

MMBT945-H
MMBT945-H

UNISONIC TECHNOLOGIES CO., LTD MMBT9018 NPN SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL 3OSCILLATOR OF FM/VHF TUNER 12SOT-23 FEATURES * High Current Gain Bandwidth Product 3f T = 1.1GHz (Typ) 12SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B

9.10. mmbt9015lt1.pdf Size:135K _wej

MMBT945-H
MMBT945-H

RoHS MMBT9015LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-233LOW FREQRENCY,LOW NOISE AMPLIFIER1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:VCE=-45V1.1.BASE2.EMITTER2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VV

9.11. mmbt9013lt1.pdf Size:138K _wej

MMBT945-H
MMBT945-H

RoHS MMBT9013LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 90122.EMITTER Collector Current :Ic=500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 40

9.12. mmbt9014lt1.pdf Size:136K _wej

MMBT945-H
MMBT945-H

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-233PRF-AMPLIFIER,LOW LEVEL&LOW NOISE1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:VCE=45V1.1.BASE High Totalpower Dissipation Pc=225mW2.EMITTER High life And Good Linearity2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacterist

9.13. mmbt9018lt1.pdf Size:129K _wej

MMBT945-H
MMBT945-H

RoHS MMBT9018LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-233AM/FM IF AMPLIFIER,LOCAL OSCILATOR1OF FM/VHF TUNER High Current Gain Bandwidth2 Product fT=1100MHz1.1.BASE2.EMITTER2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VVCEO 15VEmitter-Base Vol

9.14. mmbt9012lt1.pdf Size:135K _wej

MMBT945-H
MMBT945-H

RoHS MMBT9012LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 9013G2.EMITTER Collector Current :Ic=-500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO

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