MMBTA13LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA13L, SMMBTA13L,MMBTA14L, SMMBTA14LDarlington AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)Compliant* CASE 318STYLE 6COLLECTOR 3MAXIM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA13LT1/DMMBTA13LT1Darlington Amplifier TransistorsMMBTA14LT1*NPN SiliconCOLLECTOR 3*Motorola Preferred DeviceBASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitte

January 2005MMBTA13NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.32SOT-231Mark: 1M1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTORDESCRIPTIONThe UTC MMBTA13 is a darlington transistor.FEATURES1*Collector-Emitter Voltage: Vces = 30V*Collector Dissipation : Pc ( mas ) = 625 mWSOT-231:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )PARAMETER SYMBOL VALUE UNITCollector-B

MMBTA13 MMBTA14Elektronische Bauelemente Darlington Amplifier Transistor NPN SiliconRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxAL A 2.800 3.040COLLECTOR 3B 1.200 1.4003 3C 0.890 1.110SBASE 1 B1 21 D 0.370 0.5002G 1.780 2.040V GEMITTER 2H 0.013 0.100J 0.085 0.177CFEATURES K 0.450 0.600HJL 0.890 1.0

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit : mm FEATURES1. BASE Darlington Amplifier 2. EMITTER3. COLLECTORMarking : K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

SEMICONDUCTOR MMBTA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05VCBOCollector-Base Voltage 30 VK 0.00 ~ 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm 1. BASE Marking : MMBTA13:K2D; MMBTA14:K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

MMBTA13MMBTA14COLLECTOR 3Darlington AmplifierTransistorsNPN BASE1EMITTER 2MA XIMUM R AT ING SR ating S ymbol Value UnitC ollector- E mitter Voltage V 30 V dcC E S 3C ollector- B as e Voltage V 30 V dcC B O1E mitter- B as e Voltage V 10 V dcE B O2C ollector C urrent - C ontinuous IC 300 mAdcT HE R MA L C HA R A C T E R IS T IC SS OT -23 C harac teris t

SMD Type DiodesDarlington TransistorsMMBTA13 (KMBTA13)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO