MMBTA64LT1G Datasheet. Equivalente

 ..1. Size:486K  onsemi
 mmbta63lt1g mmbta64lt1g.pdf

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 Compliant* STYLE 6 MAXIMUM RATINGS COLLECTOR

 7.1. Size:156K  motorola
 mmbta63l mmbta64.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc CASE 318 08, STYLE 6 Emitter Base Voltage VEBO 10

 7.2. Size:127K  fairchild semi
 mpsa64 mmbta64 pzta64.pdf

November 2011 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2V EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Coll

 7.3. Size:35K  kec
 mmbta63 mmbta64.pdf

SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base VCBO -30 V MMBTA63/64 K 0.00

 7.4. Size:842K  htsemi
 mmbta64.pdf

MMBTA64 TRANSISTOR(PNP) SOT 23 FEATURES For Applications Requiring High Current Gain MARKING 2V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -30 V V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -800 mA C P Collector Power

 7.5. Size:461K  wietron
 mmbta64.pdf

MMBTA64 COLLECTOR Darlington Transistor 3 3 PNP Silicon 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit V Collector-Emitter Voltage CES -30 Vdc Collector-Base Voltage VCBO -30 Vdc Emitter-Base Voltage VEBO -10 Vdc IC mAdc Collector Current-Continuous -500 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation

 7.6. Size:239K  first silicon
 mmbta64.pdf

SEMICONDUCTOR MMBTA64 TECHNICAL DATA Darlington Transistors PNP Silicon We declare that the material of product 3 compliance with RoHS requirements. 2 MAXIMUM RATINGS 1 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 Vdc Collector Current Continuous IC 500 mAdc DEVIC