MMBTA70LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA70LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -40 Vdc BASE Emitter-Base Voltage VEBO -4.0 Vdc 2 Collector Current - Continuous IC -100 mAdc EMITTER THERMAL CHARACTERISTICS Characterist

MMBTA70LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -40 Vdc BASE Emitter-Base Voltage VEBO -4.0 Vdc 2 Collector Current - Continuous IC -100 mAdc EMITTER THERMAL CHARACTERISTICS Characterist

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA70LT1/D General Purpose Transistor MMBTA70LT1 COLLECTOR PNP Silicon 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Current Continuous IC 100 mAdc

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA92LT1/D High Voltage Transistors * MMBTA92LT1 COLLECTOR PNP Silicon 3 MMBTA93LT1 *Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol MMBTA92 MMBTA93 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 SOT

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA42LT1/D High Voltage Transistors * MMBTA42LT1 NPN Silicon COLLECTOR MMBTA43LT1 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol MMBTA42 MMBTA43 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 Emitter Base

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318 08, STYLE 6 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc THERMAL C

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA05LT1/D MMBTA05LT1 Driver Transistors MMBTA06LT1* NPN Silicon COLLECTOR *Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector Emitter Voltage VCEO 60 80 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 80 Vdc Emit

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc CASE 318 08, STYLE 6 Emitter Base Voltage VEBO 10

DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification 2004 Jan 16 Supersedes data of 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professi

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun

MMBTA92 Small signal PNP transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d

MMBTA42 Small signal NPN transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu

MPSA05/MMBTA05 NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 Mark 1H 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter V

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

MPSA55 MMBTA55 PZTA55 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2H PNP General Purpose Amplifier Absolute Maximum Ratings* Symbol Parameter Value Units VCES Collector-Emitter Voltage

January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

MPSA92 MMBTA92 PZTA92 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 5.0

MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage

November 2011 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2V EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Coll

MPSA14 MMBTA14 PZTA14 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Ba

March 2011 MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33. MPSA06 MMBTA06 PZTA06 C C E E C B TO-92 SOT-23 SOT-223 B Mark 1G EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Colle

February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag

MPSA06 MMBTA06 PZTA06 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Volta

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound. Complementary PNP Type MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA05 / MMBTA06 NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

MMBTA55 / MMBTA56 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA05 / MMBTA06 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA92

SMBTA06/MMBTA06 NPN Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Colle

SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage 2 3 Complementary types 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA42/MMBTA42 s1D SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage VCEO

SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCES 30 Collector-base voltage

SMBTA56/MMBTA56 PNP Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type SMBTA06 / MMBTA06(NPN) 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Collector-

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA

MMBTA43 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +1

M C C MMBTA05 TM Micro Commercial Components Micro Commercial Components THRU 20736 Marilla Street Chatsworth CA 91311 MMBTA06 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56) General Purpose Ideal

MCC MMBTA55 TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 MMBTA56 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General This device is designed for general purpose amplifier applications at collector curren

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBTA92 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package PNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Voltage Transistor

MMBTA55,MMBTA56 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMBTA42 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon High RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1

MMBTA44 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +1

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 Compliant* STYLE 6 MAXIMUM RATINGS COLLECTOR

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb

MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model -- 4 kV ESD Rating Machine Model -- 400 V http //onsemi.com Features COLLECTOR 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 3 Collector -- Emitter Voltage VCEO 80 Vdc Collector -- Bas

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant* COLLECTOR 3 MAXIMUM RATING

MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITTER

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb

MMBTA20LT1 General Purpose Amplifier NPN Silicon Features Pb-Free Package is Available http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 BASE Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR-5

MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBTA05LT1 60 MMBTA06LT1 80 3 Collector-Base Voltage VCBO Vdc MMBTA05LT1 60 1 MMBTA06LT1 80 2 Emitter-Base Vo

MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halog

MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VE

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-B

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halogen

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM

MMBTA06WT1G, SMMBTA06WT1G, Driver Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV ESD Rating Machine Model - 400 V Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-70 Site and Control Change Requirements CASE 419 These Devices are Pb-Free, Halogen

MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat

MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring http //onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collec

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant* COLLECTOR 3 MAXIMUM RATING

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol 92 93 Unit BASE Collector-Emitter Voltage VCEO -300 -200 Vdc Collector-Base Voltage VCBO -300 -200 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 -5.0 Vdc Collector Curren

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1 for telephone signal switching and for high voltage amplifier. 2 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter voltage VCEO= -300V * Collector Dissipation PC(MAX)=350mW ORDERING INFOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3 *Collector-Emitter voltage V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO *Collector current up to 300mA 1 *Complement to UTC MMBTA94/93 2 *Power Dissipation P (max)=350mW D SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage VCEO=300V * High current gain * Collector Dissipation Pc (max) =350mW Lead-free MMBTA42L Halogen-free MMBTA42G ORDERING INFORMA

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 1 2 * Collector-Emitter voltage VCEO=300V(MMBTA42) SOT-23 * Collector-Emitter voltage VCEO=200V(MMBTA43) (JEDEC TO-236) * High current gain * Coll

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 * Collector-Emitter Voltage V = -400V CEO * Collector Dissipation P = 350mW C(MAX) * Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2 SOT-23 * Telephone Switching (JEDEC TO-236) * High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

UNISONIC TECHNOLOGIES CO., LTD MMBTA05 Preliminary AMPLIFIER TRANSISTOR NPN MMBTA05 FEATURES * Collector-Emitter Voltage VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA05L-AL3-R MMBTA05G-AL3-R SOT-323 B E C Tape Reel Note Pin assignment E EMITTER, C COLLECTOR, B BASE MARKING www.unisonic.com.tw 1

UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=-80V * Collector Dissipation PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5

UNISONIC TECHNOLOGIES CO., LTD MMBTA55 Preliminary AMPLIFIER TRANSISTOR PNP MMBTA55 FEATURES * Collector-Emitter Voltage VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA55L-AE3-R MMBTA55G-AE3-R SOT-23 E B C Tape Reel MMBTA55L-AL3-R MMBTA55G-AL3-R SOT-323 E B C Tape Reel Note Pin assignment E EMITTER,

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=80V * Collector Dissipation PD=350mW 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBTA06G-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Base C Collector

MMBTA92 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Pb-free is available. A 2.800 3.040 Power dissipation & Collector current B 1.200 1.400 Pcm 0.3W Icm -0.3A High voltage V(BR) -300V C 0.890 1.110 A D 0.370 0.500 L G 1.780 2.040 3 H 0.013 0.100 COLLECTO

MMBTA92W PNP Silicon Elektronische Bauelemente General Purpose Transistor MMBTA92W 300 VCE = 10 Vdc TJ = +125 C 250 200 25 C 150 -55 C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 150 Cib @ 1MHz 130 110 10 90 Ccb @ 1MHz 70 1.0 50 TJ = 25 C VCE = 20 Vdc 30 F = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1 3 5 7 9 11 13 15 17 19 2

MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10

MMBTA43 0.5A , 200V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA93 3 3 Top View C B 1 1 2 MARKING 2 K E ABX D H J F G PACKAGE INFORMATION Package MPQ Leader Size Millimeter

MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E MMBTA44 4D D H J F G SYMBOL Millimeter Millimeter REF. REF. Collector Min. Max. Min.

MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 Dim Min Max 1 A A 2.800 3.040 L 2 B 1.200 1.400 3 C 0.890 1.110 S COLLECTOR Top View B D 0.370 0.500 1 2 3 G 1.780 2.040 V G H 0.013 0.100 1 J 0.085 0.177 BASE C K 0.450 0.600 L 0.890 1.020 2 H J D E

MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 COLLECTOR 3 B 1.200 1.400 3 3 C 0.890 1.110 S BASE 1 B 1 2 1 D 0.370 0.500 2 G 1.780 2.040 V G EMITTER 2 H 0.013 0.100 J 0.085 0.177 C FEATURES K 0.450 0.600 H J L 0.890 1.0

MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor A L 3 3 FEATURES Top View C B 1 Driver Transistor 1 2 2 K E D MARKING H J F G Collector C Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2

MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A L 3 3 MARKING Top View C B 1 1 2 2GM 2 K E D PACKAGE INFORMATION H J F G Package MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter R

MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA56 3 3 Top View C B 1 1 2 MARKING 2 K E 1GM D H J F G PACKAGE INFORMATION Package MPQ Leader Size Mi

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 in

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25 C unless otherwise specifie

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitte

www.jscj-elec.com AD-MMBTA28 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA28 Plastic-Encapsulated Transistor AD-MMBTA28 Transistor (NPN) FEATURES High current gain AEC-Q101 qualified MARKING 3SS = Device code 3SS EQUIVALENT CIRCUIT 3 1 2 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA28 MAXIMUM RATINGS (T = 25 C unless otherw

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (PNP) SOT 23 FEATURES Driver Transistors MARKING 2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT 23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING 1GM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltage 40 V L 0.55 P P

SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA92/93. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1

SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 VCBO Collector-Base Voltage 30 V K 0.00 0.10

SEMICONDUCTOR MMBTA05 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA55. _ + 2.93 0.20 A B 1.30+0.20/-0.15 Driver Stage Application of 20 to 25 Watts Amplifiers. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0

SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E Complementary to MMBTA06 L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-B

SEMICONDUCTOR MMBTA55 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES E L B L Complementary to MMBTA05. DIM MILLIMETERS Driver Stage Application of 20 to 25 Watts Amplifiers. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA42/43. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1

SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base VCBO -30 V MMBTA63/64 K 0.00

SEMICONDUCTOR MMBTA06 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. E L B L FEATURE DIM MILLIMETERS _ + A 2.93 0.20 Complementary to MMBTA56. B 1.30+0.20/-0.15 C 1.30 MAX Suffix U Qualified to AEC-Q101. 2 3 D 0.40+0.15/-0.05 ex) MMBTA06-RTK/HU E 2.40+0.30/-0.20 G 1.90 1 H 0.95 J 0.13+0.10/-0.05 K

SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissi

MMBTA92 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

MMBTA28 TRANSISTOR(NPN) FEATURES SOT 23 High Current Gain MARKING 3SS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 80 V CBO 2. EMITTER V Collector-Emitter Voltage 80 V CEO 3. COLLECTOR V Emitter-Base Voltage 12 V EBO IC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal

MMBTA43 TRANSISTOR(NPN) SOT 23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA93 1. BASE MARKING ABX 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 5 V EBO I Collector

MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V I

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit mm 1. BASE Marking MMBTA13 K2D; MMBTA14 K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA94 TRANSISTOR(PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -200 mA C I Collector Current -Pulsed -300 mA C

MMBTA93 TRANSISTOR(PNP) SOT 23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 1. BASE MARKING YW 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -200 V CEO V Emitter-Base Voltage -5 V EBO IC Collec

MMBTA64 TRANSISTOR(PNP) SOT 23 FEATURES For Applications Requiring High Current Gain MARKING 2V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -30 V V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -800 mA C P Collector Power

MMBTA05 TRANSISTOR(NPN) SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Juncti

MMBTA56 TRANSISTOR(PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip

MMBTA55 TRANSISTOR(PNP) SOT 23 FEATURES Driver Transistors MARKING 2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW C R The

MMBTA06 TRANSISTOR(NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT 23 V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 500 mA C P Collector P

MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT 23 V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 200 mA C I Collector Current -Pulsed 300

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Unit GMA92 GMA93 Collector-Emitter Voltage VCEO -300 -200 Vdc -

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA94 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO -400 V Collector-Emitter Voltage - Collec

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA06 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 80 Vdc

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 V Collector-Emitter Voltage - Collect

MMBTA92 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING 2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

MMBTA42 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. Applications Dimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M

MMBTA13,14 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking MMBTA13 K2D; MMBTA14 K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

MMBTA44 Transistor(NPN) SOT-23 Features Power dissipation PCM = 0.35W (Tamb=25 ) ICM = 0.2A Collector current Collector-base voltage V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

MMBTA92 COLLECTOR High-Voltage PNP Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-E m itter Voltage V -3 0 0 Vdc CE O Collector-B as e Voltage VCB O -3 0 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current-Continuous IC mAdc -5 0 0 Thermal Characteristics Characteristics Symbol

MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 MMBTA55 MMBTA56 -60 V -80 CEO -60 -80 -4.0 -4.0 -5 MMBTA55=2H, MMBTA56=2GM (3) - -60 MMBTA55 MMBTA56 -80 - 0 MMBTA55 -60 MMBTA56 -80 - 0 -4.0 u -0.1 I =0) S B -0.1 -6 MMBTA55 u -0.1 -8 MMBTA56 _ _

MMBTA94 COLLECTOR High-Voltage PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -400 Vdc CEO Collector-Base Voltage VCBO -400 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC mAdc -150 Thermal Characteristics Characteristics Symbol Max Unit Maximum Power

MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 MMBTA05 MMBTA06 VCEO 60 80 60 80 4.0 4.0 MMBTA05=1H, MMBTA06=1GM (3) 60 MMBTA05 MMBTA06 80 0 MMBTA05 60 MMBTA06 80 0 4.0 u 0.1 I =0) S B 0.1 6 MMBTA05 u 0.1 8 MMBTA06 _ _

MMBTA64 COLLECTOR Darlington Transistor 3 3 PNP Silicon 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit V Collector-Emitter Voltage CES -30 Vdc Collector-Base Voltage VCBO -30 Vdc Emitter-Base Voltage VEBO -10 Vdc IC mAdc Collector Current-Continuous -500 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation

MMBTA42 MMBTA43 COLLECTOR High-Voltage NPN Transistor 3 3 Surface Mount 1 1 BASE 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage MMBTA42 300 V V CEO MMBTA43 200 Collector-Base Voltage MMBTA42 300 V V CBO MMBTA43 200 Emitter-Base Voltage MMBTA42 6.0 V EBO V MMBTA43 6.0 C

MMBTA13 MMBTA14 COLLECTOR 3 Darlington Amplifier Transistors NPN BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating S ymbol Value Unit C ollector- E mitter Voltage V 30 V dc C E S 3 C ollector- B as e Voltage V 30 V dc C B O 1 E mitter- B as e Voltage V 10 V dc E B O 2 C ollector C urrent - C ontinuous IC 300 mAdc T HE R MA L C HA R A C T E R IS T IC S S OT -23 C harac teris t

MMBTA44 COLLECTOR 3 High-Voltage NPN Transistor SOT-23 3 Surface Mount 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit C ollector-E mitter V oltage V 400 Vdc CEO C ollector-B ase V oltage VCBO 450 Vdc E mitter-B as e V Oltage VEBO 6.0 Vdc C ollector C urrent-C ontinuous IC 300 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipat

FM120-M WILLAS THRU MMBTA5xLT1 Driver Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better revSiliconge current and thermal resistance. PNP erse leaka SOD-123H Low profile surface mounted application in order to optimi

FM120-M WILLAS THRU MMBTA94LT1 PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200V TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent powe We declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance. SOD-123H compliance with RoHS re

FM120-M WILLAS THRU MMBTA9xLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board

FM120-M WILLAS THRU MMBTA4xLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H RoHS product for packing code suffix "G" Low profile surface moun

FM120-M WILLAS THRU MMBTA0xLT1 Driver Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to FEATURES optimize

MMBTA1xLT1 Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc SOT 23 Collector Base Voltage V CBO 30 Vdc Emitter Base Voltage V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , , MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1 B

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , , MMBTA92T(BR3CG92T) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , , , MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 V Collector Current IC 500 mA Powe

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Parameter Symbol Rating Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Total Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperatur

MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCES 80 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 500 mA

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBTA92 300 V -VCBO MMBTA93 200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 V Emitter Base Voltage -VEBO 500 mA Collector Cur

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA High Voltage Transistor PNP Silicon FEATURE High voltage. For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. 3 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking Shipping SOT 23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G 2D 10000/Tape&Ree

SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA High Voltage Transistors We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel 2 MMBTA42LT3G 1D SOT-23 10000/Tape&Reel 1 MMBTA43LT1G M1E SOT-23 3000/Tape&Reel SOT-23 10000/Tape&Reel SOT 23 MMBTA43LT3G M1

SEMICONDUCTOR MMBTA55/56 TECHNICAL DATA Driver Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 2 1 MAXIMUM RATINGS Value SOT 23 Rating Symbol MMBTA55 MMBTA56 Unit Collector Emitter Voltage V CEO 60 80 Vdc 3 Collector Base Voltage V 60 80 Vdc CBO COLLECTOR Emitter Base Voltage V 4.0 Vdc EBO 1 Colle

SEMICONDUCTOR MMBTA94 TECHNICAL DATA PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product 2 compliance with RoHS requirements. 1 Description SOT 23 The MMBTA94 is designed for application that requires high voltage. COLLECTOR Features 3 High Breakdown Voltage VCEO=400(Min.) at IC=1mA 1 BASE DEVICE MARKING 2 MMB TA94LT1G = 4Z EMITTER Absolute

SEMICONDUCTOR MMBTA14 TECHNICAL DATA Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION 2 Device Marking Shipping 1 MMBTA13 1M 3000/Tape & Reel MMBTA14 1N 3000/Tape & Reel SOT 23 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 Collector Emitter Voltage V 30 Vdc CES 1 Collector Base Vol

SEMICONDUCTOR MMBTA64 TECHNICAL DATA Darlington Transistors PNP Silicon We declare that the material of product 3 compliance with RoHS requirements. 2 MAXIMUM RATINGS 1 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 Vdc Collector Current Continuous IC 500 mAdc DEVIC

SEMICONDUCTOR MMBTA42F TECHNICAL DATA TRANSISTOR (NPN) MMBTA42F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A42 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T

SEMICONDUCTOR MMBTA55/56 TECHNICAL DATA Driver Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA55 MMBTA56 Unit SOT 23 Collector Emitter Voltage V CEO 60 80 Vdc Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4.0 Vdc EBO Collector Current

SEMICONDUCTOR MMBTA05/06 TECHNICAL DATA Driver Transistors FEATURES We declare that the material of product 3 compliance with RoHS requirements. 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA05 MMBTA06 Unit SOT 23 Collector Emitter Voltage V 60 80 Vdc CEO Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4.0 Vdc EBO Collector Current Continuous I

SEMICONDUCTOR MMBTA05/06 TECHNICAL DATA Driver Transistors FEATURES We declare that the material of product compliance with RoHS requirements. DEVICE MARKING MMB = 1H , MMBTA06 = 1GM TA05 3 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA05 MMBTA06 Unit SOT 23 Collector Emitter Voltage V 60 80 Vdc CEO Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4

SEMICONDUCTOR MMBTA44 TECHNICAL DATA NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 2 The MMBTA44 is designed for application that requires high voltage. 1 Features SOT 23 High Breakdown Voltage VCEO=400(Min.) at IC=1mA Complementary to MMBTA94 COLLECTOR 3 DEVICE MARKING 1 MMBTA44 = 3D B

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE

SEMICONDUCTOR MMBTA92F TECHNICAL DATA TRANSISTOR (PNP) MMBTA92F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A92 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T

SMD Type Transistors PNP Transistors MMBTA92 (KMBTA92) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors NPN Transistors MMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA 3 NPN high voltage transistors COLLECTOR 1 BASE 1 Base 2 Emitter 3 Collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

SMD Type Transistors NPN Transistors MMBTA42 (KMBTA42) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 High breakdown voltage 3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co

SMD Type Diodes Darlington Transistors MMBTA13 (KMBTA13) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors NPN Transistors MMBTA45 (KMBTA45) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Collector-Emitter Voltage 1 2 +0.1 +0.05 Complement to MMBTA93 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

SMD Type Transistors PNP Transistors MMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA44 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

SMD Type Diodes Darlington Transistors MMBTA14 (KMBTA14) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors NPN Transistors MMBTA05 (KMBTA05) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=60V 1 2 Driver transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors MMBTA56 (KMBTA56) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2 COLLECTOR +0.1 +0.05 3 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1 1.Base BASE 2.Emitter 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors PNP Transistors MMBTA55 (KMBTA55) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60V 1 2 COLLECTOR +0.1 +0.05 3 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1 1.Base BASE 2.Emitter 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors NPN Transistors MMBTA06 (KMBTA06) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For Switching and Amplifier Applications Complementary to MMBTA56 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Col

SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Collector-Emitter Voltage 1 2 +0.1 +0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

MMBTA42 NPN HIGH VOLTAGE TRANSISTOR 300 Volt POWER 250 mWatt VOLTAGE FEATURES 0.120(3.04) NPN silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) MECH

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-323 Package Terminals Solderable per MIL-STD-750, Method 2026 Appr

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case SOT-23 Package Terminals Solderable

General Purpose Transistor MMBTA42-G (NPN) RoHS Device Features SOT-23 -High breakdown voltage. 0.119(3.00) 0.110(2.80) -Low collector-emitter saturation voltage. 3 -Ultra small surface mount package. 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10)

General Purpose Transistor MMBTA92-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -High voltage transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in

MMBTA92 TRANSISTOR PNP TRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Em

MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -200 mA C I Collector Current -Pulsed

MMBTA55 SOT-23 Plastic-Encapsulate Transistors Equivalent Circuit FEATURES Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60V SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -4 V Collec

MMBTA44 General Purpose Transistors NPN Silicon Product Summary VCEO 400V I c 200mA PC 350mW FEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Collector-Base Voltage 400 V VCBO Collector-Emitter Voltage 400 V VCEO Emitter-Base Voltage VEBO V 6 A

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE 98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASE SOT-323 TERMINALS SOLDERABLE PER MIL-STD-202G, MET

R UMW UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

R UMW UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000

R UMW UMW MMBTA05 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continu

R UMW UMW MMBTA06 SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT-23 FEATURES For Switching and Amplifier Applications 1. BASE Complementary Type PNP Transistor MMBTA56 2. EMITTER MARKING 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO V Collector-Emitter V

MMBTA42 High Voltage NPN Transistor Package outline Features High voltage SOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0

MMBTA92 FEATURES High Collector Current SOT-23 Complementary to MMBTA42 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBO V Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBO IC Collector Current -0.2 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To

MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3 2 1 1. BASE Marking 1D 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Co

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA06 TRANSISTOR (NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 SOT 23 MARKING 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO 1. BASE V Collector-Emitter Voltage 80 V CEO 2. EMITTER V Em

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT 23 Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO 3. COLLECTOR V Emitter-Base Voltage

MMBTA9 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High voltage transistor Marking 2D Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -200 mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA4 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking 1D Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C

MMBTA4 4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking 3D Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current C 200 mA P Collector Power Dissipation 350 mW

MMBTA92 PNP High Voltage Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -300 V CBO V collector-

MMBTA92 SOT-23 Plastic-Encapsulate Transistor MMBTA92 TRANSISTOR (PNP) SOT-23 FEATURES High voltage transistor Marking 2D (3)C 1. BASE 2D 2. EMITTER 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -300 VCEO Collector-Emitter Voltage V -300 VEBO Emitter-Base Voltage -5 V IC Co

MMBTA42 SOT-23 Plastic-Encapsulate Transistor SOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs)

www.msksemi.com MMBTA92-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE 2. EMITTER SOT 23 MARKING 2D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

www.msksemi.com MMBTA44-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS 1. BASE MARKING 3D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V

www.msksemi.com MMBTA42-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP) 1. BASE 2. EMITTER SOT 23 Marking 1D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Coll

www.msksemi.com MMBTA94-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Breakdown Voltage 1. BASE MARKING 4D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Co

MMBTA94 PNP Transistor Features SOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DC current gain. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Units Collector Base Voltage -V 400 V CBO Collector Emitter Voltage -V 400 V CEO Emitter Base Voltage -V 6 V EBO C

MMBTA44 NPN Transistor Features SOT-23 (TO-236) For High Voltage Switching and Amplifier Applications. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 500 V CBO Collector Emitter Voltage V 400 V CEO Emitter Base Voltage V 6 V EBO Collector Cur

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92 SOT-23 PNP TRANSISTOR 3 FEATURES High Voltage Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol 2 Parameter Value Unit VCBO V 1.BASE Collector Base Voltage -300 2.EMITTER VCEO V Collector Emitter Voltage -300 3.COLLECTOR VEBO V Emitter Base V

Jingdao Microelectronics co.LTD MMBTA42 MMBTA42 SOT-23 NPN TRANSISTOR 3 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Parameter Symbol Value Unit 2.EMITTER 3.COLLECTOR VCBO Collector Base Vo

MMBTA92 SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage SOT-23 Complementary to MMBTA92 (PNP) 1 BASE 2 EMITTER 3 COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value alue Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO

MMBTA44 SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 1. BASE MARKING 3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Co

MMBTA92 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

MMBTA42 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter High breakdown voltage 1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base V

MMBTA92 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High Breakdown Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Current -Puised ICM -

MMBTA42 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBTA92 Collector Current Ic=0.5A High breakdown voltage Low collector-emitter saturation voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 300 V Collector-Base Voltage VCEO 300 V Collector-Emitter Volta

MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

MMBTA06 TRANSISTOR(NPN) SOT-23 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features For Switching and Amplifier Applications MMBTA56 ; Complementary to MMBTA56 300mW; Power Dissipation of 300mW High Stability and High Reliability Me

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHS COMPLIANT COMPLIANT MMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, s

RoHS RoHS COMPLIANT COMPLIANT MMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit

RoHS RoHS COMPLIANT COMPLIANT MMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Moldi

RoHS RoHS COMPLIANT COMPLIANT MMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound

RoHS RoHS COMPLIANT COMPLIANT MMBTA06Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications NPN General Purpose Amplifier Mechanical Data Case SOT-23 Terminals Tin plated leads, solde

RoHS RoHS COMPLIANT COMPLIANT MMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V VCEO Collector-Emitter Voltage 3

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (PNP) FEATURES Driver Transistors MARKING 1H 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emitter-Base Voltage -4 V I Collector Current -500 mA C P Colle

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter Voltage VCEO 300 200 Vdc - Collector-Base Voltage VCBO 300 200 Vdc - Emitter-Base Voltage VEBO 6.0 6.0

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA94 FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 V Collector-Emitter Voltage - CEO Collector-Base Voltage - V -400 V CBO Emitter-Base Voltage V -7 V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit (MMBTA92) (MMBTA93) Collector-Emitter Voltage VCEO -300 -200 Vdc - Collector-Base Voltage VCBO -300 -200 Vdc - Emitter-Base Voltage VEBO -6.0 -6.0 Vdc

MMBTA92 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -300Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V. Collector current IC=-0.3A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

MMBTA42 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 300Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V. Collector current IC=0.3A. ansition frequency fT>50MHz @ Tr IC=10mAdc, VCE=20Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol

MMBTA92 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

MMBTA42 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

MMBTA94 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

MMBTA44 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A