MMDT3904V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDT3904V 📄📄
Código: KAP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT-563
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MMDT3904V datasheet
..1. Size:175K diodes
mmdt3904v.pdf 
MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) B C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1
..2. Size:226K mcc
mmdt3904v sot-563.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra
..3. Size:221K mcc
mmdt3904v.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra
..4. Size:1354K jiangsu
mmdt3904v.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60
..5. Size:991K cn cbi
mmdt3904v.pdf
Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector
0.1. Size:219K diodes
mmdt3904vc.pdf
MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case SOT563 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Lev
6.1. Size:345K diodes
mmdt3904.pdf
MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N
6.3. Size:293K secos
mmdt3904.pdf
MMDT3904 NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power dissipation (0.525)REF O PCM 0.2 W (Tamp.= 25 C) .053(1.35 .096(2.45) .045(1.15 .085(2.15) Collector current ICM 0.2 A .018(0.46) .010(0.26) .0
6.4. Size:1652K jiangsu
mmdt3904.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904 DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll
6.5. Size:260K lge
mmdt3904.pdf
MMDT3904 SOT-363 Dual Transistor(NPN) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C
6.6. Size:764K kexin
mmdt3904.pdf
SMD Type Transistors NPN Transistors MMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con
6.7. Size:164K panjit
mmdt3904.pdf
MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic
6.8. Size:499K slkor
mmdt3904.pdf
MMDT3904 Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO c
6.10. Size:1256K pjsemi
mmdt3904sg.pdf
MMDT3904SG Double NPN Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3904 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitter Base Voltage
6.11. Size:2667K cn twgmc
mmdt3904.pdf
MMDT3904 MMDT3904 MMDT3904 MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN) FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 5 4 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Colle
6.12. Size:384K cn yangzhou yangjie elec
mmdt3904.pdf
RoHS COMPLIANT MMDT3904 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K6N Equivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El
6.13. Size:882K cn doeshare
mmdt3904.pdf
MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5
6.14. Size:963K cn cbi
mmdt3904dw.pdf
SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC
6.15. Size:517K cn haohai electr
mmdt3904.pdf
MMDT3904 DUAL TRANSISTOR NPN+NPN 0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904 DUAL TRANSISTOR NPN+NPN FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MAXIMUM RATINGS Ta=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base
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