MMDT3906V Datasheet. Equivalente

 ..1. Size:178K  diodes
 mmdt3906v.pdf

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) B C Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

 ..2. Size:736K  mcc
 mmdt3906v.pdf

MMDT3906V Features Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF" PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Oth

 ..3. Size:229K  mcc
 mmdt3906v sot-563.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3906V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

 0.1. Size:207K  diodes
 mmdt3906vc.pdf

MMDT3906VC Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching C1 B2 E2 Ultra-Small Surface Mount Package SOT-563 Lead Free By Design/RoHS Compliant (Note 1) B C Dim Min Max Typ "Green" Device (Note 4) A 0.15 0.30 0.25 E1 B1 C2 B 1.10 1.25 1.20 Mechanic

 6.1. Size:441K  diodes
 mmdt3906.pdf

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case SOT363 IC = -200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Lev

 6.2. Size:1058K  mcc
 mmdt3906.pdf

MMDT3906 Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363 Operatin

 6.3. Size:250K  mcc
 mmdt3906 sot-363.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3906 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

 6.4. Size:234K  secos
 mmdt3906.pdf

MMDT3906 PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation. O .053(1.35 .096(2.45) PCM 0.2 W (Tamp.=25 C) .045(1.15 .085(2.15) Collector current .018(0.46) .010(0.26) ICM - 0.2 A

 6.5. Size:347K  jiangsu
 mmdt3906.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitte

 6.6. Size:228K  lge
 mmdt3906.pdf

MMDT3906 SOT-363 Dual Transistor(PNP) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING K3N Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5

 6.7. Size:786K  kexin
 mmdt3906.pdf

SMD Type Transistors PNP Transistors MMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

 6.8. Size:391K  panjit
 mmdt3906.pdf

 6.9. Size:608K  slkor
 mmdt3906.pdf

MMDT3906 Dual PNP Small Signal Transistors MMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

 6.10. Size:1194K  pjsemi
 mmdt3906sg.pdf

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3906 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage -V 40 V CEO Emitter Base Vol

 6.11. Size:2053K  cn twgmc
 mmdt3906.pdf

MMDT3906 MMDT3906 MMDT3906 MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP) SOT-363 6 5 4 FEATURES 1 Epitaxial planar die construction 2 3 Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Vo

 6.12. Size:329K  cn yangzhou yangjie elec
 mmdt3906.pdf

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

 6.13. Size:1032K  cn doeshare
 mmdt3906.pdf

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

 6.14. Size:681K  cn cbi
 mmdt3906dw.pdf

SOT-363 Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DW FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO