MMST2222A-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

General Purpose TransistorMMST2222A-G (NPN)RoHS DeviceFeatures -Power dissipationSOT-323OPCM : 0.2W (TA=25 C) -Collector current 0.087 (2.20)0.070 (1.8)ICM : 0.6A3 -Collector-base voltage0.054 (1.35)0.045 (1.15)V(BR)CBO : 75V1 2 -Operating and storage junction temperature range0.056 (1.40)O OTJ, TSTG : -55 C to +150 C0.047 (1.20)0.006 (0.15)Marking:

UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A Features Dimensions (Unit : mm) 1) BVCEO > 40V (IC=10mA) UMT2222A2) Complements the UMT2907A / SST2907A / MMST2907A. (1) Emitter(2) BaseROHM : UMT3EIAJ : SC-70 (3) CollectorSOT-323 Package, marking, and packaging specifications SST2222APart No. U

MMST2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case: SOT323 IC = 600mA Collector Current Case Material: Molded Plastic. Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementary PNP

MCCMicro Commercial ComponentsTMMMST2222A20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisure Sensitivity Level 1 Power

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsSOT-323 MMST2222A TRANSISTOR ( NPN )FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2907A) 1. BASE MARKING: K3P 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VC

MMST2222ATRANSISTOR(NPN)SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2907A) 2. EMITTER MARKING: K3P 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Curren

MMST2222ASOT-323 Transistor (NPN) SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2907A) MARKING: K3P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage

SMD Type TransistorsNPN TransistorsMMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600

RoHS RoHSCOMPLIANT COMPLIANTMMST2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabi