PBHV9414Z Todos los transistores

 

PBHV9414Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBHV9414Z
   Código: V9414Z
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.65 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT-223
 

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PBHV9414Z Datasheet (PDF)

 ..1. Size:260K  nxp
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PBHV9414Z

PBHV9414Z140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor24 January 2014 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.2. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector

 9.1. Size:333K  philips
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PBHV9414Z

PBHV9050Z500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistorRev. 1 19 August 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation v

 9.2. Size:151K  philips
pbhv9215z.pdf pdf_icon

PBHV9414Z

PBHV9215Z150 V, 2 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8215Z.1.2 Features High voltage Low collector-emitt

 9.3. Size:90K  philips
pbhv9050t.pdf pdf_icon

PBHV9414Z

PBHV9050T500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistorRev. 01 16 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PMBTA45.1.2 Features High voltage Low collector-emitter s

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History: JE9153 | BFY45 | 2N1146A | BC349 | DTS3704B | 2SC395A | SFT250

 

 
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