CHDTB113EKGP Todos los transistores

 

CHDTB113EKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTB113EKGP
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar CHDTB113EKGP

 

CHDTB113EKGP Datasheet (PDF)

 ..1. Size:175K  chenmko
chdtb113ekgp.pdf

CHDTB113EKGP CHDTB113EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.1. Size:102K  chenmko
chdtb113zkgp.pdf

CHDTB113EKGP CHDTB113EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113ZKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.1. Size:104K  chenmko
chdtb114ekgp.pdf

CHDTB113EKGP CHDTB113EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.2. Size:63K  chenmko
chdtb114tkgp.pdf

CHDTB113EKGP CHDTB113EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top

 


CHDTB113EKGP
  CHDTB113EKGP
  CHDTB113EKGP
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A

 

 

 
Back to Top