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CHDTB123EKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTB123EKGP
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 39
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar CHDTB123EKGP

 

CHDTB123EKGP Datasheet (PDF)

 ..1. Size:104K  chenmko
 chdtb123ekgp.pdf pdf_icon

CHDTB123EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTB123EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 6.1. Size:140K  chenmko
 chdtb123ykgp.pdf pdf_icon

CHDTB123EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTB123YKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 6.2. Size:113K  chenmko
 chdtb123tkgp.pdf pdf_icon

CHDTB123EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTB123TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 7.1. Size:58K  chenmko
 chdtb122jkgp.pdf pdf_icon

CHDTB123EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTB122JKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

MOSTRAR MÁS

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History: KSD1221O | ISA1287AS1 | CHDTC123YKGP | CHDTC323TUGP | CHT4126SGP | IMB2AFRA | INC5006AC1

 

 
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