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CHDTC114WEGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC114WEGP
   Código: WEA
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 24
   Paquete / Cubierta: SOT-416

 Búsqueda de reemplazo de transistor bipolar CHDTC114WEGP

 

CHDTC114WEGP Datasheet (PDF)

 ..1. Size:92K  chenmko
chdtc114wegp.pdf pdf_icon

CHDTC114WEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC114WEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

 5.1. Size:60K  chenmko
chdtc114wkgp.pdf pdf_icon

CHDTC114WEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC114WKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 5.2. Size:71K  chenmko
chdtc114wugp.pdf pdf_icon

CHDTC114WEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC114WUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c

 6.1. Size:95K  chenmko
chdtc114eegp.pdf pdf_icon

CHDTC114WEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC114EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

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History: CHDTC114GUGP | ISA1603AM1 | 2SB791 | INC5001AC1 | 2SA570 | CHEMG3GP | MPS2221A

 

 
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