CHDTC114YUGP Todos los transistores

 

CHDTC114YUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC114YUGP
   Código: WJ
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar CHDTC114YUGP

 

CHDTC114YUGP Datasheet (PDF)

 ..1. Size:108K  chenmko
chdtc114yugp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114YUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 5.1. Size:70K  chenmko
chdtc114ykgp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

 5.2. Size:96K  chenmko
chdtc114yegp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114YEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.1. Size:95K  chenmko
chdtc114eegp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.2. Size:60K  chenmko
chdtc114wkgp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114WKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.3. Size:140K  chenmko
chdtc114tugp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.4. Size:61K  chenmko
chdtc114tkgp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.5. Size:62K  chenmko
chdtc114ekpt.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114EKPTSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.6. Size:141K  chenmko
chdtc114gugp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114GUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.7. Size:57K  chenmko
chdtc114gkgp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114GKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.8. Size:70K  chenmko
chdtc114ekgp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (/SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.9. Size:102K  chenmko
chdtc114eugp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.10. Size:84K  chenmko
chdtc114tegp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.11. Size:92K  chenmko
chdtc114wegp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114WEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.12. Size:71K  chenmko
chdtc114wugp.pdf

CHDTC114YUGP CHDTC114YUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC114WUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

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History: MUN5114T1G | NA21HI

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