CHDTC123EUGP Todos los transistores

 

CHDTC123EUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC123EUGP
   Código: EUA
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT-323
 

 Búsqueda de reemplazo de CHDTC123EUGP

   - Selección ⓘ de transistores por parámetros

 

CHDTC123EUGP Datasheet (PDF)

 ..1. Size:131K  chenmko
 chdtc123eugp.pdf pdf_icon

CHDTC123EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 5.1. Size:123K  chenmko
 chdtc123ekgp.pdf pdf_icon

CHDTC123EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 5.2. Size:130K  chenmko
 chdtc123eegp.pdf pdf_icon

CHDTC123EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.1. Size:109K  chenmko
 chdtc123yegp.pdf pdf_icon

CHDTC123EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123YEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

MOSTRAR MÁS

Otros transistores... CHDTC115EUGP , CHDTC115GKGP , CHDTC115GUGP , CHDTC115TEGP , CHDTC115TKGP , CHDTC115TUGP , CHDTC123EEGP , CHDTC123EKGP , 2N4401 , CHDTC123JEGP , CHDTC123JKGP , CHDTC123JUGP , CHDTC123TKGP , CHDTC123YEGP , CHDTC123YKGP , CHDTC123YUGP , CHDTC124EEGP .

History: BFV94N | TI952 | 2SC411 | BFW71 | AC122R | AM83135-001

 

 
Back to Top

 


 
.