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CHDTC123JEGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC123JEGP
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-416

 Búsqueda de reemplazo de transistor bipolar CHDTC123JEGP

 

CHDTC123JEGP Datasheet (PDF)

 ..1. Size:150K  chenmko
 chdtc123jegp.pdf pdf_icon

CHDTC123JEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123JEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c

 5.1. Size:134K  chenmko
 chdtc123jugp.pdf pdf_icon

CHDTC123JEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123JUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

 5.2. Size:127K  chenmko
 chdtc123jkgp.pdf pdf_icon

CHDTC123JEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123JKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 6.1. Size:131K  chenmko
 chdtc123eugp.pdf pdf_icon

CHDTC123JEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

MOSTRAR MÁS

Otros transistores... CHDTC115GKGP , CHDTC115GUGP , CHDTC115TEGP , CHDTC115TKGP , CHDTC115TUGP , CHDTC123EEGP , CHDTC123EKGP , CHDTC123EUGP , S9013 , CHDTC123JKGP , CHDTC123JUGP , CHDTC123TKGP , CHDTC123YEGP , CHDTC123YKGP , CHDTC123YUGP , CHDTC124EEGP , CHDTC124EKGP .

History: 2SC1966 | CHT2222XGP | DTL8012 | DTS423M | NSS12100XV6 | NSE180 | 2SA562TMO

 

 
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