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CHDTC123YEGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC123YEGP
   Código: YEA
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SOT-416

 Búsqueda de reemplazo de transistor bipolar CHDTC123YEGP

 

CHDTC123YEGP Datasheet (PDF)

 ..1. Size:109K  chenmko
 chdtc123yegp.pdf pdf_icon

CHDTC123YEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

 5.1. Size:94K  chenmko
 chdtc123yugp.pdf pdf_icon

CHDTC123YEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123YUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

 5.2. Size:86K  chenmko
 chdtc123ykgp.pdf pdf_icon

CHDTC123YEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

 6.1. Size:131K  chenmko
 chdtc123eugp.pdf pdf_icon

CHDTC123YEGP

CHENMKO ENTERPRISE CO.,LTD CHDTC123EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

MOSTRAR MÁS

Otros transistores... CHDTC115TUGP , CHDTC123EEGP , CHDTC123EKGP , CHDTC123EUGP , CHDTC123JEGP , CHDTC123JKGP , CHDTC123JUGP , CHDTC123TKGP , D209L , CHDTC123YKGP , CHDTC123YUGP , CHDTC124EEGP , CHDTC124EKGP , CHDTC124EUGP , CHDTC124GKGP , CHDTC124GUGP , CHDTC124TEGP .

History: 2SB1106 | CHDTC623TUGP | CHT5551GP | CHT4672XGP | 2SC4761 | 3CG6517 | 2SA706

 

 
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