CHDTC124EEGP Todos los transistores

 

CHDTC124EEGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC124EEGP
   Código: 8B
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT-416

 Búsqueda de reemplazo de transistor bipolar CHDTC124EEGP

 

CHDTC124EEGP Datasheet (PDF)

 ..1. Size:85K  chenmko
chdtc124eegp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 5.1. Size:85K  chenmko
chdtc124eugp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 5.2. Size:72K  chenmko
chdtc124ekgp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

 6.1. Size:59K  chenmko
chdtc124gkgp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124GKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.2. Size:145K  chenmko
chdtc124gugp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124GUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.3. Size:169K  chenmko
chdtc124xugp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124XUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.4. Size:86K  chenmko
chdtc124tegp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.5. Size:160K  chenmko
chdtc124xegp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124XEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.6. Size:70K  chenmko
chdtc124tugp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.7. Size:146K  chenmko
chdtc124xkgp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124XKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.8. Size:59K  chenmko
chdtc124tkgp.pdf

CHDTC124EEGP CHDTC124EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC124TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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