CHDTC314TUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHDTC314TUGP
Código: TUH
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: SOT-323
Búsqueda de reemplazo de transistor bipolar CHDTC314TUGP
CHDTC314TUGP Datasheet (PDF)
1.1. chdtc314tkgp.pdf 
Size:90K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC314TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
1.2. chdtc314tugp.pdf Size:95K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC314TUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at I
4.1. chdtc323tkgp.pdf Size:72K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC323TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
4.2. chdtc363tkgp.pdf Size:92K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC363TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
4.3. chdtc363eugp.pdf Size:138K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
4.4. chdtc363ekgp.pdf Size:139K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
4.5. chdtc323tugp.pdf Size:76K _china
CHENMKO ENTERPRISE CO.,LTD CHDTC323TUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at I
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