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CHEMA6GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHEMA6GP

Código: A7

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT-553

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CHEMA6GP Datasheet (PDF)

1.1. chema6gp.pdf Size:105K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA6GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

5.1. chema4gp.pdf Size:106K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

5.2. chema5gp.pdf Size:114K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA5GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

 5.3. chema8gp.pdf Size:131K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA8GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

5.4. chema2gp.pdf Size:92K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

 5.5. chema11gp.pdf Size:118K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation curren

5.6. chema3gp.pdf Size:122K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA3GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

5.7. chema7gp.pdf Size:133K _china

CHEMA6GP
CHEMA6GP

CHENMKO ENTERPRISE CO.,LTD CHEMA7GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

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