CHEMB10GP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHEMB10GP

Código: B0

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-563

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CHEMB10GP datasheet

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CHEMB10GP

CHENMKO ENTERPRISE CO.,LTD CHEMB10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

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CHEMB10GP

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CHENMKO ENTERPRISE CO.,LTD CHEMB4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

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CHENMKO ENTERPRISE CO.,LTD CHEMB9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili

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