CHIMB2GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHIMB2GP
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SOT-457
Búsqueda de reemplazo de transistor bipolar CHIMB2GP
CHIMB2GP Datasheet (PDF)
chimb2gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB2GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturation
chimb4gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB4GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio
chimb9gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB9GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturation
chimb7gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB7GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio
chimb11gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio
chimb1gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB1GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio
chimb10gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturati
chimb5gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB5GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturation
chimb3gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHIMB3GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio
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