CHUMB11GP Todos los transistores

 

CHUMB11GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHUMB11GP

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: SOT-363

Búsqueda de reemplazo de transistor bipolar CHUMB11GP

 

CHUMB11GP Datasheet (PDF)

0.1. chumb11gp.pdf Size:92K _chenmko

CHUMB11GP
CHUMB11GP

CHENMKO ENTERPRISE CO.,LTDCHUMB11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur

8.1. chumb10gp.pdf Size:108K _chenmko

CHUMB11GP
CHUMB11GP

CHENMKO ENTERPRISE CO.,LTDCHUMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

8.2. chumb1gp.pdf Size:87K _chenmko

CHUMB11GP
CHUMB11GP

CHENMKO ENTERPRISE CO.,LTDCHUMB1GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur

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