DMA56606 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMA56606
Código: LA
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SMINI6-F3-B
- Selección de transistores por parámetros
DMA56606 Datasheet (PDF)
dma56606.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DMA56606Silicon PNP epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimensi
dma56601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DMA56601Silicon PNP epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here. Click!
dma56603.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DMA56603Silicon PNP epitaxial planar typeFor digital circuitsDMA26603 in SMini6 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimensi
dma56605.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DMA56605Silicon PNP epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimensi
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB354 | SRA2201E | 2SC4396 | TI428 | DRA9114E | BTB1424FP | 2N3950
History: 2SB354 | SRA2201E | 2SC4396 | TI428 | DRA9114E | BTB1424FP | 2N3950



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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