DMA9640T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMA9640T
Código: G6
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSMINI6-F3-B
Búsqueda de reemplazo de transistor bipolar DMA9640T
DMA9640T Datasheet (PDF)
dma9640t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA9640TSilicon PNP epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimension clicks here. Click!
dma96407.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA96407Silicon PNP epitaxial planar typeFor digital circuitsDMA56407 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of
dma96403.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA96403Silicon PNP epitaxial planar typeFor digital circuitsDMA56403 in SSMini6 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free packagePackage dimen
dma96406.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA96406Silicon PNP epitaxial planar typeFor digital circuitsDMA56406 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of co
dma96401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA96401Silicon PNP epitaxial planar typeFor digital circuitsDMA56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free packagePackage dimen
dma9640m.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA9640MSilicon PNP epitaxial planar typeFor digital circuitsDMA5640M in SSMini6 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Package dime
dma96402.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA96402Silicon PNP epitaxial planar typeFor digital circuitsDMA56402 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free packagePackage dimen
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: J583 | NB222EG | NB223YH | TP2222A | ACY29 | 2N6302
History: J583 | NB222EG | NB223YH | TP2222A | ACY29 | 2N6302
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050