DMC26100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMC26100

Código: P3

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: MINI5-G3-B

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DMC26100 datasheet

 ..1. Size:359K  panasonic
dmc26100.pdf pdf_icon

DMC26100

 7.1. Size:396K  fairchild semi
fdmc2610.pdf pdf_icon

DMC26100

January 2007 FDMC2610 tm N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200m Features General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5A process. It has been optimized for power management Low Profile - 1mm max in a Pow

 7.2. Size:356K  panasonic
dmc26106.pdf pdf_icon

DMC26100

 7.3. Size:361K  panasonic
dmc26104.pdf pdf_icon

DMC26100

This product complies with the RoHS Directive (EU 2002/95/EC). DMC26104 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Collector (Tr2)

Otros transistores... DMA9610F, DMA96401, DMA96402, DMA96403, DMA96406, DMA96407, DMA9640M, DMA9640T, C5198, DMC26101, DMC26102, DMC26103, DMC26104, DMC26105, DMC26106, DMC2610E, DMC26400