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DMC56201 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMC56201
   Código: E2
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SMINI5-F3-B
     - Selección de transistores por parámetros

 

DMC56201 Datasheet (PDF)

 ..1. Size:364K  panasonic
dmc56201.pdf pdf_icon

DMC56201

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56201Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (

 7.1. Size:369K  panasonic
dmc56205.pdf pdf_icon

DMC56201

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56205Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.2. Size:366K  panasonic
dmc56200.pdf pdf_icon

DMC56201

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56200Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdf pdf_icon

DMC56201

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

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History: 2SD1231 | PXT8550C | 3DD3145_A6

 

 
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