DMC56602 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMC56602
Código: G1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SMINI6-F3-B
Búsqueda de reemplazo de transistor bipolar DMC56602
DMC56602 Datasheet (PDF)
dmc56602.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56602Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here. Click! Basi
dmc56604.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56604Silicon NPN epitaxial planar typeFor digital circuitsDMC26604 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimensi
dmc56600.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56600Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimensi
dmc56605.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56605Silicon NPN epitaxial planar typeFor digital circuitsDMC26605 in SMini6 type package Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of co
dmc56606.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56606Silicon NPN epitaxial planar typeFor digital circuitsDMC26606 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of co
dmc56601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56601Silicon NPN epitaxial planar typeFor digital circuitsDMC26601 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimensi
dmc56603.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC56603Silicon NPN epitaxial planar typeFor digital circuitsDMC26603 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimensi
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS