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DMG563H5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG563H5
   Código: U0
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SMINI5-F3-B
 

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DMG563H5 Datasheet (PDF)

 ..1. Size:486K  panasonic
 dmg563h5.pdf pdf_icon

DMG563H5

This product complies with the RoHS Directive (EU 2002/95/EC).DMG563H5Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package

 7.1. Size:481K  panasonic
 dmg563h1.pdf pdf_icon

DMG563H5

This product complies with the RoHS Directive (EU 2002/95/EC).DMG563H1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package

 7.2. Size:476K  panasonic
 dmg563h4.pdf pdf_icon

DMG563H5

This product complies with the RoHS Directive (EU 2002/95/EC).DMG563H4Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package

 7.3. Size:486K  panasonic
 dmg563ha.pdf pdf_icon

DMG563H5

This product complies with the RoHS Directive (EU 2002/95/EC).DMG563HASilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets,

MOSTRAR MÁS

Otros transistores... DMG26406 , DMG26412 , DMG264H0 , DMG56301 , DMG56302 , DMG56306 , DMG563H1 , DMG563H4 , TIP41 , DMG563HA , DMG56401 , DMG56402 , DMG56403 , DMG56404 , DMG56405 , DMG56406 , DMG5640M .

History: MJE13003VN7 | BCR112 | 2SD1843

 

 
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