DMG56402
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG56402
Código: F9
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SMINI6-F3-B
Búsqueda de reemplazo de transistor bipolar DMG56402
DMG56402
Datasheet (PDF)
..1. Size:477K panasonic
dmg56402.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26402 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco
7.1. Size:480K panasonic
dmg56405.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26405 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri
7.2. Size:474K panasonic
dmg56406.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26406 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri
7.3. Size:474K panasonic
dmg56401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26401 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco
7.4. Size:488K panasonic
dmg5640n.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component c
7.5. Size:474K panasonic
dmg5640m.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640MSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free package
7.6. Size:478K panasonic
dmg56403.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56403Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packageP
7.7. Size:473K panasonic
dmg56404.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56404Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26404 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B E
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