DMG56403 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG56403
Código: H2
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SMINI6-F3-B
Búsqueda de reemplazo de transistor bipolar DMG56403
DMG56403 Datasheet (PDF)
dmg56403.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56403Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packageP
dmg56405.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26405 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri
dmg56406.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26406 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri
dmg56401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26401 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco
dmg5640n.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component c
dmg5640m.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640MSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free package
dmg56402.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26402 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco
dmg56404.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG56404Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26404 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B E
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N102
History: 2N102
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