DRA2114Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA2114Y
Código: LC
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: MINI3-G3-B
- Selección de transistores por parámetros
DRA2114Y Datasheet (PDF)
dra2114y.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base
dra2114e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
dra2114t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2115t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: T1013 | KT8107E2 | B722S-Q | KTC4371 | HEPS3060 | 2SD1231 | DME914C1
History: T1013 | KT8107E2 | B722S-Q | KTC4371 | HEPS3060 | 2SD1231 | DME914C1



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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